Corsair CML8GX3M2A1600C9 4GB vs SK Hynix HMA81GS6DJR8N-XN 8GB

总分

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

差异规格评论

差异

Corsair CML8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB

报告一个错误

SK Hynix HMA81GS6DJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GS6DJR8N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 39

左右 -11% 更低的延时
更快的读取速度，GB/s

15.8 14.6

测试中的平均数值
更快的写入速度，GB/s

12.4 8.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1600C9 4GB

SK Hynix HMA81GS6DJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 35
读取速度，GB/s

14.6 15.8
写入速度，GB/s

8.8 12.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2355 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.01G86.9H50C 1GB

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Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

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Crucial Technology CT8G4DFD824A.C16FDD2 8GB

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Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB