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Corsair CML8GX3M2A1866C9 4GB
AMD R744G2400U1S 4GB

Corsair CML8GX3M2A1866C9 4GB vs AMD R744G2400U1S 4GB

总分
star star star star star
Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分
star star star star star
AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异 规格 评论

差异

Corsair CML8GX3M2A1866C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB
报告一个错误
AMD R744G2400U1S 4GB 需要考虑的原因
AMD R744G2400U1S 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 38
    左右 -73% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1866C9 4GB
AMD R744G2400U1S 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 22
  • 读取速度，GB/s
    14.1 left arrow 16.7
  • 写入速度，GB/s
    8.7 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2228 left arrow 2862

Corsair CML8GX3M2A1866C9 4GB RAM的比较

Crucial Technology CT8G4DFS8213.C8FH1 8GB
Crucial Technology CB4GU2400.M8E 4GB

AMD R744G2400U1S 4GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
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内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
内存RAM
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73BH0-YK0 8GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Apacer Technology 78.DAGRL.4050C 16GB
Apacer Technology 78.DAGRL.4050C 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8HTF12864HZ-800H1 1GB
Micron Technology 8HTF12864HZ-800H1 1GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Samsung SF4641G8CKHI6DFSDS 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GTRG 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMR64GX4M4C3333C16 16GB
Corsair CMR64GX4M4C3333C16 16GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Golden Empire CL16-18-18 D4-3400 4GB
Golden Empire CL16-18-18 D4-3400 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avant Technology W641GU42J5213N3 8GB
Avant Technology W641GU42J5213N3 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW128GX4M8C3000C16 16GB
Corsair CMW128GX4M8C3000C16 16GB
内存RAM