Corsair CML8GX3M2A1866C9 4GB vs Kingston 9905622-075.A00G 8GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Kingston 9905622-075.A00G 8GB

Kingston 9905622-075.A00G 8GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

更快的读取速度，GB/s

14.1 13.7

测试中的平均数值
更快的写入速度，GB/s

8.7 7.2

测试中的平均数值

Kingston 9905622-075.A00G 8GB

需要考虑的原因
Kingston 9905622-075.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Kingston 9905622-075.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

14.1 13.7
写入速度，GB/s

8.7 7.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2228 2325

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CE6 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Kingston 99U5403-465.A00LF 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Kingston XRGM6C-MIE 16GB

Kingston XRGM6C-MIE 16GB

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Samsung M471B5773DH0-CH9 2GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

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Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB