Corsair CMSO4GX3M1C1600C11 4GB vs Corsair CMV8GX4M1L2400C16 8GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Corsair CMV8GX4M1L2400C16 8GB

Corsair CMV8GX4M1L2400C16 8GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 96

左右 71% 更低的延时
更快的读取速度，GB/s

12.6 11

测试中的平均数值
更快的写入速度，GB/s

8.3 4.8

测试中的平均数值

Corsair CMV8GX4M1L2400C16 8GB

需要考虑的原因
Corsair CMV8GX4M1L2400C16 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMV8GX4M1L2400C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 96
读取速度，GB/s

12.6 11.0
写入速度，GB/s

8.3 4.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 1062

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Crucial Technology BLS4G4S240FSD.M8FADM 4GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

A-DATA Technology ADOVE1A0834E 1GB

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Samsung M393B1K70CH0-CH9 8GB

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Apacer Technology 78.CAGP7.C7Z0B 8GB

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A-DATA Technology VDQVE1B16 2GB

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Apacer Technology 78.CAGNT.4050B 8GB

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Kingston 99U5474-022.A00LF 2GB

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Samsung M471B5273CH0-CH9 4GB

V-Color Technology Inc. TA48G36S818BNK 8GB

V-Color Technology Inc. TA48G36S818BNK 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9905702-014.A00G 8GB

Kingston 9905702-014.A00G 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Corsair CMK128GX4M4A2666C16 32GB

Corsair CMK128GX4M4A2666C16 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905701-017.A00G 16GB

Kingston 9905701-017.A00G 16GB