Corsair CMSO4GX3M1C1600C11 4GB vs Crucial Technology CT8G4DFS8213.C8FH1 8GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 29

左右 3% 更低的延时

Crucial Technology CT8G4DFS8213.C8FH1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FH1 8GB

报告一个错误

更快的读取速度，GB/s

14.8 12.6

测试中的平均数值
更快的写入速度，GB/s

8.4 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 29
读取速度，GB/s

12.6 14.8
写入速度，GB/s

8.3 8.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 2458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Samsung M471A5143EB1-CRC 4GB

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Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Apacer Technology 78.DAGP2.4030B 16GB

Apacer Technology 78.DAGP2.4030B 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB