Corsair CMSO4GX3M1C1600C11 4GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

需要考虑的原因
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

报告一个错误

更快的读取速度，GB/s

15.5 12.6

测试中的平均数值
更快的写入速度，GB/s

12.8 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

12.6 15.5
写入速度，GB/s

8.3 12.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 3050

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

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Samsung M3 91T2953GZ3-CF7 1GB

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Apacer Technology 78.BAGNF.40C0B 4GB

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Samsung M378B5173BH0-CH9 4GB

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Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB