Corsair CMSO4GX3M1C1600C11 4GB vs Shenzen Recadata Storage Technology 8GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

Shenzen Recadata Storage Technology 8GB

需要考虑的原因
Shenzen Recadata Storage Technology 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 28

左右 -27% 更低的延时
更快的读取速度，GB/s

17 12.6

测试中的平均数值
更快的写入速度，GB/s

10.5 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Shenzen Recadata Storage Technology 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 22
读取速度，GB/s

12.6 17.0
写入速度，GB/s

8.3 10.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2820

RAM Latency Calculator

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CM4X16GE2666C16K2 16GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

A-DATA Technology VDQVE1B16 2GB

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Corsair CM4X4GD3000C16K2 4GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Kingston 9965600-012.A02G 16GB

Kingston 9965600-012.A02G 16GB

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB