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Corsair CMSO4GX3M1C1600C11 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Corsair CMSO4GX3M1C1600C11 4GB vs Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

总分
star star star star star
Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分
star star star star star
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

差异 规格 评论

差异

Corsair CMSO4GX3M1C1600C11 4GB 需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Corsair CMSO4GX3M1C1600C11 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    12.6 left arrow 16.8
  • 写入速度，GB/s
    8.3 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3154

Corsair CMSO4GX3M1C1600C11 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
A-DATA Technology AM2L16BC8R2-B0XS 8GB
A-DATA Technology AM2L16BC8R2-B0XS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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InnoDisk Corporation M4S0-8GS1NCIK 8GB
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Asgard VMA45UG-MEC1U2AW1 8GB
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Kingston KF3000C16D4/32GX 32GB
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Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Kingston K1CXP8-MIE 16GB
内存RAM
Corsair VSA2GSDS667C4 2GB
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Kingston KHX3200C18D4/8G 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
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Corsair CMK16GX4M4A2133C15 4GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
EVGA 8GX-D4-2800-MR 8GB
EVGA 8GX-D4-2800-MR 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
内存RAM
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM