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Corsair CMV4GX3M1B1600C11 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Corsair CMV4GX3M1B1600C11 4GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

总分
star star star star star
Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

差异 规格 评论

差异

Corsair CMV4GX3M1B1600C11 4GB 需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 25
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Corsair CMV4GX3M1B1600C11 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 23
  • 读取速度，GB/s
    14.2 left arrow 16.7
  • 写入速度，GB/s
    8.1 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 11 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2307 left arrow 3025

Corsair CMV4GX3M1B1600C11 4GB RAM的比较

Corsair CMV4GX3M1A1600C11 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Micron Technology 16A6A2G64HZ-2-2E1 16GB
内存RAM
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内存RAM
PUSKILL DDR3 1600 8G 8GB
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Samsung M378A2K43CB1-CTD 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Kingston 9905403-156.A00LF 2GB
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G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
内存RAM
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G Skill Intl F4-4133C19-8GTZKWC 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
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Kingston 9905678-023.A00G 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Corsair CM4X8GF2400C14K4 8GB
内存RAM
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G Skill Intl F5-5600J4040C16G 16GB
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G Skill Intl F4-3600C16-8GTZSW 8GB
内存RAM
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Kingston 9905471-006.A01LF 4GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
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