Corsair CMV4GX3M1B1600C11 4GB vs G Skill Intl F4-4000C18-8GTRS 8GB

总分

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分

G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

差异规格评论

差异

Corsair CMV4GX3M1B1600C11 4GB

需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

G Skill Intl F4-4000C18-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTRS 8GB

报告一个错误

更快的读取速度，GB/s

17.6 14.2

测试中的平均数值
更快的写入速度，GB/s

18.0 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMV4GX3M1B1600C11 4GB

G Skill Intl F4-4000C18-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

14.2 17.6
写入速度，GB/s

8.1 18.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2307 3872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Corsair CMD16GX4M2E4000C19 8GB

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Kingston KHX1866C10D3/4G 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Wilk Elektronik S.A. W-HK26S16G 16GB

Wilk Elektronik S.A. W-HK26S16G 16GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Samsung M471A5143SB1-CRC 4GB

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Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB