Corsair CMX4GX3M1A1333C9 4GB vs Dust Leopard DDR4-2400 C17 4GB 4GB

总分

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

差异规格评论

差异

Corsair CMX4GX3M1A1333C9 4GB

需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 81

左右 51% 更低的延时
更快的写入速度，GB/s

7.0 6.4

测试中的平均数值

Dust Leopard DDR4-2400 C17 4GB 4GB

需要考虑的原因
Dust Leopard DDR4-2400 C17 4GB 4GB

报告一个错误

更快的读取速度，GB/s

13.3 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M1A1333C9 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 81
读取速度，GB/s

12.8 13.3
写入速度，GB/s

7.0 6.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2021 1456

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R744G2400U1S-UO 4GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston KHX3200C16D4/8GX 8GB

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G Skill Intl F4-3600C16-32GTZR 32GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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AMD R538G1601U2S 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT8G4SFD824A.C16FE 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston HP24D4R7D4MAM-32 32GB

Kingston HP24D4R7D4MAM-32 32GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Essencore Limited IM48GU88N24-FFFHA0 8GB

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Kingston 9965640-004.C00G 16GB

Kingston 9965640-004.C00G 16GB