Corsair CMX8GX3M2A1600C11 4GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

总分

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

总分

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

差异规格评论

差异

Corsair CMX8GX3M2A1600C11 4GB

需要考虑的原因
Corsair CMX8GX3M2A1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 57

左右 32% 更低的延时

A-DATA Technology AO1E34RCSV1-BF1S 16GB

需要考虑的原因
A-DATA Technology AO1E34RCSV1-BF1S 16GB

报告一个错误

更快的读取速度，GB/s

16.8 12.1

测试中的平均数值
更快的写入速度，GB/s

13.7 9.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A1600C11 4GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 57
读取速度，GB/s

12.1 16.8
写入速度，GB/s

9.8 13.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2453 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Apacer Technology 78.CAGR9.40C0B 8GB

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Samsung M378B5173EB0-YK0 4GB

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G Skill Intl F4-3600C16-8GTZR 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Crucial Technology CT4G4DFS824A.C8FE 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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SK Hynix HMA82GS6CJR8N-UH 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Kingston KHX2133C11D3/4GX 4GB

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Samsung M471A1K43DB1-CTD 8GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

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SK Hynix HMAA4GU6AJR8N-VK 32GB

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G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB