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Corsair CMX8GX3M2A1600C11 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB

Corsair CMX8GX3M2A1600C11 4GB vs Crucial Technology BLS8G4D26BFSC.16FE 8GB

总分
star star star star star
Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

差异 规格 评论

差异

Corsair CMX8GX3M2A1600C11 4GB 需要考虑的原因
Corsair CMX8GX3M2A1600C11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 66
    左右 41% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 8.3
    测试中的平均数值
Crucial Technology BLS8G4D26BFSC.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 12.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMX8GX3M2A1600C11 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 66
  • 读取速度，GB/s
    12.1 left arrow 16.1
  • 写入速度，GB/s
    9.8 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2453 left arrow 1810

Corsair CMX8GX3M2A1600C11 4GB RAM的比较

Kingston KHX1600C10D3/4G 4GB
Samsung M471A1K43DB1-CTD 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB RAM的比较

Smart Modular SMU4TDC3C0K0464SCG 4GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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G Skill Intl F3-10600CL9-2GBNT 2GB
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
Corsair CMX8GX3M2A1600C11 4GB
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Crucial Technology BLS8G4D26BFSC.16FE 8GB
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内存RAM
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内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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内存RAM
Samsung M378B5273DH0-CH9 4GB
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内存RAM
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G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
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内存RAM