Corsair CMX8GX3M2A1600C11 4GB vs Samsung M393A2K40BB2-CTD 16GB

总分

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

总分

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

差异规格评论

差异

Corsair CMX8GX3M2A1600C11 4GB

需要考虑的原因
Corsair CMX8GX3M2A1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 65

左右 40% 更低的延时
更快的读取速度，GB/s

12.1 8.5

测试中的平均数值
更快的写入速度，GB/s

9.8 5.8

测试中的平均数值

Samsung M393A2K40BB2-CTD 16GB

需要考虑的原因
Samsung M393A2K40BB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A1600C11 4GB

Samsung M393A2K40BB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 65
读取速度，GB/s

12.1 8.5
写入速度，GB/s

9.8 5.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2453 1981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D240FSE.16FBR 16GB

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Corsair CMX4GX3M2A1600C9 2GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Apacer Technology 78.DAGNN.4030B 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9905630-033.A00G 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB