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Corsair CMX8GX3M2A1600C11 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Corsair CMX8GX3M2A1600C11 4GB vs Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

总分
star star star star star
Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

总分
star star star star star
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

差异 规格 评论

差异

Corsair CMX8GX3M2A1600C11 4GB 需要考虑的原因
Corsair CMX8GX3M2A1600C11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 75
    左右 48% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 7.1
    测试中的平均数值
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB 需要考虑的原因
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 12.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMX8GX3M2A1600C11 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 75
  • 读取速度，GB/s
    12.1 left arrow 14.9
  • 写入速度，GB/s
    9.8 left arrow 7.1
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2453 left arrow 1763

Corsair CMX8GX3M2A1600C11 4GB RAM的比较

Kingston KHX1600C10D3/4G 4GB
Samsung M471A1K43DB1-CTD 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Corsair CMX8GX3M2A1600C11 4GB
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内存RAM
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内存RAM
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内存RAM