Corsair CMX8GX3M2A2000C9 4GB vs G Skill Intl F4-3200C16-16GIS 16GB

总分

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

总分

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

差异规格评论

差异

Corsair CMX8GX3M2A2000C9 4GB

需要考虑的原因
Corsair CMX8GX3M2A2000C9 4GB

报告一个错误

G Skill Intl F4-3200C16-16GIS 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GIS 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 -25% 更低的延时
更快的读取速度，GB/s

18 14.3

测试中的平均数值
更快的写入速度，GB/s

14.1 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A2000C9 4GB

G Skill Intl F4-3200C16-16GIS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 28
读取速度，GB/s

14.3 18.0
写入速度，GB/s

9.4 14.1
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2479 3537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-3600C16-8GTZN 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SK Hynix HMA41GU6MFR8N-TF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB