Corsair CMY16GX3M2A2400C10 8GB vs Corsair CMZ16GX3M2A2400C10 8GB

总分

Corsair CMY16GX3M2A2400C10 8GB

Corsair CMY16GX3M2A2400C10 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

差异规格评论

差异

Corsair CMY16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMY16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 14% 更低的延时
更快的读取速度，GB/s

15.7 11.4

测试中的平均数值
更快的写入速度，GB/s

11.1 7.4

测试中的平均数值

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

规格

完整的技术规格清单

Corsair CMY16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

32 37
读取速度，GB/s

15.7 11.4
写入速度，GB/s

11.1 7.4
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2852 1683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology V-GeN D4V16GL24A8R 16GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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G Skill Intl F4-3200C14-8GTZRX 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Kingston 9905403-134.A00LF 2GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

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Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

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G Skill Intl F5-6400J3239G16G 16GB

Corsair CMK16GX4M2Z2933C16 8GB

Corsair CMK16GX4M2Z2933C16 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Apacer Technology 78.C1GMW.AZC0B 8GB

Apacer Technology 78.C1GMW.AZC0B 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB