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Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-4000C18-8GTZ 8GB

Corsair CMY16GX3M4A2133C8 4GB vs G Skill Intl F4-4000C18-8GTZ 8GB

总分
star star star star star
Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

差异 规格 评论

差异

Corsair CMY16GX3M4A2133C8 4GB 需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 25
    左右 20% 更低的延时
G Skill Intl F4-4000C18-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.1 left arrow 17
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-4000C18-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 25
  • 读取速度，GB/s
    17.0 left arrow 19.1
  • 写入速度，GB/s
    11.5 left arrow 16.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3077 left arrow 3845

Corsair CMY16GX3M4A2133C8 4GB RAM的比较

Kingston KHX2800C12D3/4GX 4GB
Corsair CMK8GX4M2A2133C13 4GB

G Skill Intl F4-4000C18-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F4-3000C16-8GVSB 8GB
G Skill Intl F4-3000C16-8GVSB 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Gloway International (HK) STK4U2400D17042C 4GB
Gloway International (HK) STK4U2400D17042C 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology D22.23263S.002 16GB
Apacer Technology D22.23263S.002 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CM4X16GE2666C16K8 16GB
Corsair CM4X16GE2666C16K8 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMA81GR7MFR8N-UH 8GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Apacer Technology GD2.1542WS.003 8GB
Apacer Technology GD2.1542WS.003 8GB
内存RAM