Corsair CMY8GX3M2A2666C10 4GB vs Avant Technology J642GU42J7240N2 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Avant Technology J642GU42J7240N2 16GB

Avant Technology J642GU42J7240N2 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 33

左右 48% 更低的延时
更快的读取速度，GB/s

22.8 14.5

测试中的平均数值
更快的写入速度，GB/s

15.4 10.9

测试中的平均数值

Avant Technology J642GU42J7240N2 16GB

需要考虑的原因
Avant Technology J642GU42J7240N2 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Avant Technology J642GU42J7240N2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 33
读取速度，GB/s

22.8 14.5
写入速度，GB/s

15.4 10.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3391 2485

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Avant Technology J642GU42J7240N2 16GB

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Qimonda 72T128420EFA3SB2 1GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMV8GX4M1A2400C16 8GB

Samsung M393B1G70QH0-YK0 8GB

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Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

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Kingston 9905469-143.A00LF 4GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMV4GX4M1A2666C18 4GB

Corsair CMV4GX4M1A2666C18 4GB