Corsair CMY8GX3M2A2666C10 4GB vs Corsair CMD64GX4M4B3466C16 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Corsair CMD64GX4M4B3466C16 16GB

Corsair CMD64GX4M4B3466C16 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 29

左右 41% 更低的延时
更快的读取速度，GB/s

22.8 17

测试中的平均数值

Corsair CMD64GX4M4B3466C16 16GB

需要考虑的原因
Corsair CMD64GX4M4B3466C16 16GB

报告一个错误

更快的写入速度，GB/s

15.5 15.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMD64GX4M4B3466C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 29
读取速度，GB/s

22.8 17.0
写入速度，GB/s

15.4 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 3781

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3200C14-16GFX 16GB

Samsung M471B5673EH1-CH9 2GB

Samsung M471B5673EH1-CH9 2GB

Samsung M471B5173QH0-YK0 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB