Corsair CMY8GX3M2A2666C10 4GB vs Corsair CMR64GX4M4A2666C16 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 78

左右 78% 更低的延时
更快的读取速度，GB/s

22.8 13.7

测试中的平均数值
更快的写入速度，GB/s

15.4 8.9

测试中的平均数值

Corsair CMR64GX4M4A2666C16 16GB

需要考虑的原因
Corsair CMR64GX4M4A2666C16 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMR64GX4M4A2666C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 78
读取速度，GB/s

22.8 13.7
写入速度，GB/s

15.4 8.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 1895

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Good Wealth Technology Ltd. 8GB

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Kingston ACR256X64D3S1333C9 2GB

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EVGA 16G-D4-2400-MR 8GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Kingston 9965600-018.A00G 16GB

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Samsung M471B5773DH0-CK0 2GB

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Crucial Technology BLS8G4D26BFSE.16FB 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Mushkin 99[2/7/4]197F 8GB

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Crucial Technology CT16G4SFD8213.M16FA 16GB

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Corsair CMK32GX5M2B5200C40 16GB

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Samsung M378B1G73EB0-CK0 8GB

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G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

Crucial Technology CT16G4DFD8213.M16FB 16GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB