Corsair CMY8GX3M2A2666C10 4GB vs Corsair CMT64GX4M8X3600C18 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Corsair CMT64GX4M8X3600C18 8GB

Corsair CMT64GX4M8X3600C18 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 47

左右 64% 更低的延时
更快的读取速度，GB/s

22.8 11.5

测试中的平均数值
更快的写入速度，GB/s

15.4 13.5

测试中的平均数值

Corsair CMT64GX4M8X3600C18 8GB

需要考虑的原因
Corsair CMT64GX4M8X3600C18 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMT64GX4M8X3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 47
读取速度，GB/s

22.8 11.5
写入速度，GB/s

15.4 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 2793

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-3600C17-16GTZ 16GB

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Kingston KHX1600C9S3L/4G 4GB

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Samsung M378B5773DH0-CH9 2GB

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Crucial Technology BLS8G4D240FSB.16FADG 8GB

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Kingston 99U5471-020.A00LF 4GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

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Corsair CMD16GX4M4A2800C16 4GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N