Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology BL8G32C16U4BL.8FE 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 31

左右 45% 更低的延时
更快的读取速度，GB/s

22.8 20

测试中的平均数值
更快的写入速度，GB/s

15.4 15.1

测试中的平均数值

Crucial Technology BL8G32C16U4BL.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4BL.8FE 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 31
读取速度，GB/s

22.8 20.0
写入速度，GB/s

15.4 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 3425

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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A-DATA Technology DDR4 2800 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston KHX2666C16D4/16GX 16GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB