Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology BLS16G4D240FSC.16FAD 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology BLS16G4D240FSC.16FAD 16GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 33

左右 48% 更低的延时
更快的读取速度，GB/s

22.8 15.9

测试中的平均数值
更快的写入速度，GB/s

15.4 11.9

测试中的平均数值

Crucial Technology BLS16G4D240FSC.16FAD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSC.16FAD 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 33
读取速度，GB/s

22.8 15.9
写入速度，GB/s

15.4 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3391 3052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology CT16G4DFD832A.C16FJ 16GB

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Samsung M393B1K70QB0-CK0 8GB

Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB