Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology CT16G4DFD8266.C16FN 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 32

左右 47% 更低的延时
更快的读取速度，GB/s

22.8 16.4

测试中的平均数值
更快的写入速度，GB/s

15.4 13.0

测试中的平均数值

Crucial Technology CT16G4DFD8266.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FN 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 32
读取速度，GB/s

22.8 16.4
写入速度，GB/s

15.4 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 3278

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-16GVK 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M471A5143DB0-CPB 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB