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Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Corsair CMY8GX3M2A2666C10 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 28
    左右 39% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 10.1
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 28
  • 读取速度，GB/s
    22.8 left arrow 13.8
  • 写入速度，GB/s
    15.4 left arrow 10.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2179

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMY8GX3M2A2666C10 4GB
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内存RAM
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内存RAM
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