Corsair CMZ16GX3M2A1866C9 8GB vs Samsung M393A1G40EB1-CRC 8GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 52

左右 25% 更低的延时
更快的读取速度，GB/s

14 10.5

测试中的平均数值
更快的写入速度，GB/s

9.0 7.7

测试中的平均数值

Samsung M393A1G40EB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40EB1-CRC 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

Samsung M393A1G40EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 52
读取速度，GB/s

14.0 10.5
写入速度，GB/s

9.0 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2489 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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HT Micron HTH5AN8G8NCJR-VKD 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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SK Hynix HMA851S6DJR6N-VK 4GB

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Kingston ACR26D4U9S1KA-4 4GB

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AMD R5316G1609U2K 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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A-DATA Technology AO2P24HC8T1-BTBS 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

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