Corsair CMZ16GX3M2A2400C10 8GB vs Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更快的读取速度，GB/s

12.1 11.4

测试中的平均数值
更快的写入速度，GB/s

8.5 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

11.4 12.1
写入速度，GB/s

7.4 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Corsair CMK16GX4M4B3000C15 4GB

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SK Hynix HMT41GS6MFR8C-PB 8GB

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Samsung M471B5273DH0-CK0 4GB