Corsair CMZ16GX3M2A2400C10 8GB vs Crucial Technology BL16G36C16U4B.M16FE1 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Crucial Technology BL16G36C16U4B.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4B.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 -37% 更低的延时
更快的读取速度，GB/s

20.3 11.4

测试中的平均数值
更快的写入速度，GB/s

17.3 7.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 27
读取速度，GB/s

11.4 20.3
写入速度，GB/s

7.4 17.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1683 4008

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMA451U6AFR8N-TF 4GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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SK Hynix HMA81GR7AFR8N-UH 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

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Kingston 99U5428-018.A00LF 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Kingston KP223C-ELD 2GB

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Kingston 9905403-061.A00LF 2GB

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Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB