Corsair CMZ16GX3M2A2400C10 8GB vs Crucial Technology BLS16G4D32AESB.M16FE 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Crucial Technology BLS16G4D32AESB.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D32AESB.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

18.5 11.4

测试中的平均数值
更快的写入速度，GB/s

15.2 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

11.4 18.5
写入速度，GB/s

7.4 15.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 3784

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3200C14-16GVR 16GB

G Skill Intl F4-3200C14-16GVR 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Corsair CMD64GX4M8A2400C14 8GB

Corsair CMD64GX4M8A2400C14 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905625-062.A00G 8GB

Kingston 9905625-062.A00G 8GB

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB

Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB

Kingston Kingston2GB800 2GB

Kingston Kingston2GB800 2GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

G Skill Intl F4-3200C15-8GTZSW 8GB

G Skill Intl F4-3200C15-8GTZSW 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB