Corsair CMZ16GX3M2A2400C10 8GB vs G Skill Intl F4-2800C15-4GTZ 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

G Skill Intl F4-2800C15-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-2800C15-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 37

左右 -76% 更低的延时
更快的读取速度，GB/s

18 11.4

测试中的平均数值
更快的写入速度，GB/s

13.5 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-2800C15-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 21
读取速度，GB/s

11.4 18.0
写入速度，GB/s

7.4 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2769

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B1G73EB0-CK0 8GB

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Samsung M378T5663DZ3-CF7 2GB

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Patriot Memory (PDP Systems) 3000 C18 Series 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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G Skill Intl F4-4000C16-8GTZR 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB