Corsair CMZ16GX3M2A2400C10 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Corsair CMZ16GX3M2A2400C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

更快的读取速度，GB/s

11.4 11.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更快的写入速度，GB/s

7.6 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

11.4 11.3
写入速度，GB/s

7.4 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 2292

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Apacer Technology 78.CAGSZ.4070B 8GB

Apacer Technology 78.CAGSZ.4070B 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston 9905624-046.A00G 8GB

Kingston 9905624-046.A00G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

Nanya Technology NT512T64U88A1BY-3C 512MB

Nanya Technology NT512T64U88A1BY-3C 512MB

A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB