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Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
比较
Corsair CMZ16GX3M2A2400C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
总分
Corsair CMZ16GX3M2A2400C10 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
37
左右 -28% 更低的延时
更快的读取速度,GB/s
13.5
11.4
测试中的平均数值
更快的写入速度,GB/s
10.2
7.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
29
读取速度,GB/s
11.4
13.5
写入速度,GB/s
7.4
10.2
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1683
2088
Corsair CMZ16GX3M2A2400C10 8GB RAM的比较
G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM的比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Mushkin 99[2/7/4]205F 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5713-003.A00G 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CM4X8GF2400C14K4 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA82GU7MFR8N-TF 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
A-DATA Technology DQVE1908 512MB
Kingston 9965662-010.A00G 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-MIN 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3466C18-8GTZRXB 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Super Talent F24UB16GV 16GB
Kingston ACR256X64D3S1333C9 2GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston MSI24D4U7S8MB-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology AFSD416ES1P 16GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
报告一个错误
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Bug description
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