Corsair CMZ16GX3M2A2400C10 8GB vs Kingston HX424C15PB/4 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 68

左右 46% 更低的延时
更快的写入速度，GB/s

7.4 6.9

测试中的平均数值

Kingston HX424C15PB/4 4GB

需要考虑的原因
Kingston HX424C15PB/4 4GB

报告一个错误

更快的读取速度，GB/s

15.5 11.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Kingston HX424C15PB/4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 68
读取速度，GB/s

11.4 15.5
写入速度，GB/s

7.4 6.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 1310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD48G240082 8GB

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Kingston HX424C15PB/4 4GB

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Mushkin 99[2/7/4]192[F/T] 4GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Crucial Technology CT4G4DFS8213.C8FDD2 4GB

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Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMK8GX4M1A2400C16 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Apacer Technology 78.D1GS7.B7B0B 16GB

Apacer Technology 78.D1GS7.B7B0B 16GB