Corsair CMZ16GX3M2A2400C10 8GB vs SK Hynix HMA41GR7AFR8N-UH 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 46

左右 20% 更低的延时
更快的读取速度，GB/s

11.4 11.1

测试中的平均数值

SK Hynix HMA41GR7AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA41GR7AFR8N-UH 8GB

报告一个错误

更快的写入速度，GB/s

8.1 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 46
读取速度，GB/s

11.4 11.1
写入速度，GB/s

7.4 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 2388

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M474A1G43EB1-CRC 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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SK Hynix HMA41GR7AFR8N-UH 8GB

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Team Group Inc. UD5-6400 16GB

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Corsair CMK8GX4M2B3866C18 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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A-DATA Technology DDR4 2666 2OZ 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

G Skill Intl F4-3000C15-8GRR 8GB

G Skill Intl F4-3000C15-8GRR 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB