Corsair CMZ16GX3M2A2400C10 8GB vs Transcend Information JM3200HLE-32G 32GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Transcend Information JM3200HLE-32G 32GB

Transcend Information JM3200HLE-32G 32GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 42

左右 12% 更低的延时

Transcend Information JM3200HLE-32G 32GB

需要考虑的原因
Transcend Information JM3200HLE-32G 32GB

报告一个错误

更快的读取速度，GB/s

12.9 11.4

测试中的平均数值
更快的写入速度，GB/s

9.7 7.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Transcend Information JM3200HLE-32G 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 42
读取速度，GB/s

11.4 12.9
写入速度，GB/s

7.4 9.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1683 2735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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AMD R5S38G1601U2S 8GB

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V-GEN D4H4GS24A8 4GB

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Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB