Corsair CMZ8GX3M1A1600C10 8GB vs SK Hynix HMA41GU6AFR8N-TF 8GB

总分

Corsair CMZ8GX3M1A1600C10 8GB

Corsair CMZ8GX3M1A1600C10 8GB

总分

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

差异规格评论

差异

Corsair CMZ8GX3M1A1600C10 8GB

需要考虑的原因
Corsair CMZ8GX3M1A1600C10 8GB

报告一个错误

SK Hynix HMA41GU6AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GU6AFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 -8% 更低的延时
更快的读取速度，GB/s

15.3 13.9

测试中的平均数值
更快的写入速度，GB/s

11.1 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMZ8GX3M1A1600C10 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 36
读取速度，GB/s

13.9 15.3
写入速度，GB/s

8.6 11.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2409 2696

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-001.A01LF 2GB

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Crucial Technology BLS8G4D26BFSTK.8FD 8GB

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Kingston HX318C10FK/4 4GB

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Micron Technology 8ATF2G64AZ-3G2B1 16GB

Corsair CMX4GX3M2A1600C9 2GB

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Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB