Corsair VS1GB800D2 1GB vs A-DATA Technology DDR4 2133 2OZ 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

A-DATA Technology DDR4 2133 2OZ 8GB

A-DATA Technology DDR4 2133 2OZ 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 14.4

测试中的平均数值

A-DATA Technology DDR4 2133 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 2133 2OZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 47

左右 -31% 更低的延时
更快的写入速度，GB/s

10.9 1,361.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

A-DATA Technology DDR4 2133 2OZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 36
读取速度，GB/s

4,680.7 14.4
写入速度，GB/s

1,361.1 10.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

460 2647

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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A-DATA Technology VDQVE1B16 2GB

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A-DATA Technology DQKD1A08 1GB

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Apacer Technology 78.C1GMM.AUC0B 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

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A-DATA Technology DQKD1A08 1GB

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V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

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A-DATA Technology DDR3 1333G 2GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Apacer Technology GD2.1831WS.002 16GB

Apacer Technology GD2.1831WS.002 16GB

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G Skill Intl F5-6400J3239G16G 16GB

Samsung M471A1G43DB0-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB