Corsair VS1GB800D2 1GB vs Apacer Technology 76.D105G.D090B 16GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值

Apacer Technology 76.D105G.D090B 16GB

需要考虑的原因
Apacer Technology 76.D105G.D090B 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 47

左右 -104% 更低的延时
更快的写入速度，GB/s

13.3 1,361.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Apacer Technology 76.D105G.D090B 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 23
读取速度，GB/s

4,680.7 17.9
写入速度，GB/s

1,361.1 13.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

460 3241

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3200C18D4/8G 8GB

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Netac Technology Co Ltd EKBLUE4162417AD 8GB

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Golden Empire CL16-18-18 D4-3000 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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Corsair CMK16GX4M2D3000C16 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB