Corsair VS1GB800D2 1GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值

Chun Well Technology Holding Limited D4U0826190B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 47

左右 -62% 更低的延时
更快的写入速度，GB/s

12.9 1,361.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Chun Well Technology Holding Limited D4U0826190B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 29
读取速度，GB/s

4,680.7 16.7
写入速度，GB/s

1,361.1 12.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

460 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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ADVAN Inc AM42E28UD04T-NVL 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Crucial Technology CT8G4DFS8266.C8FN 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Kingston 9905624-014.A00G 4GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

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Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Corsair CMD16GX4M4B3300C16 4GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F4-3600C19-8GSXWB 8GB