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Corsair VS1GB800D2 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB

Corsair VS1GB800D2 1GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分
star star star star star
Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异 规格 评论

差异

Corsair VS1GB800D2 1GB 需要考虑的原因
Corsair VS1GB800D2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
Chun Well Technology Holding Limited D4U0826190B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 -62% 更低的延时
  • 更快的写入速度，GB/s
    12.9 left arrow 1,361.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Corsair VS1GB800D2 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 29
  • 读取速度，GB/s
    4,680.7 left arrow 16.7
  • 写入速度，GB/s
    1,361.1 left arrow 12.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    460 left arrow 3273

Corsair VS1GB800D2 1GB RAM的比较

Unifosa Corporation GU342G0ALEPR692C6F 2GB
G Skill Intl F4-3200C15-16GVR 16GB

Chun Well Technology Holding Limited D4U0826190B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Kingston 9905734-062.A00G 32GB
Kingston 9905734-062.A00G 32GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Kingston KHX8500D2K2/2GN 1GB
Kingston KHX8500D2K2/2GN 1GB
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Kingston HP26D4S9S1ME-4 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-4400C17-16GTZR 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR16GX4M2C3600C18 8GB
Corsair CMR16GX4M2C3600C18 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMR16GX4M2A2666C16 8GB
Corsair CMR16GX4M2A2666C16 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2133C15-8GRS 8GB
G Skill Intl F4-2133C15-8GRS 8GB
内存RAM