Corsair VS1GB800D2 1GB vs Corsair CMK8GX4M2B3000C15 4GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Corsair CMK8GX4M2B3000C15 4GB

Corsair CMK8GX4M2B3000C15 4GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 17.6

测试中的平均数值

Corsair CMK8GX4M2B3000C15 4GB

需要考虑的原因
Corsair CMK8GX4M2B3000C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 47

左右 -57% 更低的延时
更快的写入速度，GB/s

13.7 1,361.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Corsair CMK8GX4M2B3000C15 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 30
读取速度，GB/s

4,680.7 17.6
写入速度，GB/s

1,361.1 13.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

460 3077

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4266C19-8GTZSW 8GB

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AMD R5S38G1601U2S 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Crucial Technology CT16G4DFD8266.M16FR 16GB

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Crucial Technology CT16G4SFD832A.C16FN 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-4266C17-16GTRGB 16GB

G Skill Intl F4-4266C17-16GTRGB 16GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Apacer Technology 78.C2GFP.C700B 8GB

Apacer Technology 78.C2GFP.C700B 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

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G Skill Intl F4-3600C19-16GSXK 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N