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Corsair VS1GB800D2 1GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB

Corsair VS1GB800D2 1GB vs Crucial Technology CT16G4SFRA266.M16FRS 16GB

总分
star star star star star
Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分
star star star star star
Crucial Technology CT16G4SFRA266.M16FRS 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

差异 规格 评论

差异

Corsair VS1GB800D2 1GB 需要考虑的原因
Corsair VS1GB800D2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.1
    测试中的平均数值
Crucial Technology CT16G4SFRA266.M16FRS 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA266.M16FRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 47
    左右 -24% 更低的延时
  • 更快的写入速度，GB/s
    8.8 left arrow 1,361.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Corsair VS1GB800D2 1GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 38
  • 读取速度，GB/s
    4,680.7 left arrow 14.1
  • 写入速度，GB/s
    1,361.1 left arrow 8.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    460 left arrow 2483

Corsair VS1GB800D2 1GB RAM的比较

Unifosa Corporation GU342G0ALEPR692C6F 2GB
G Skill Intl F4-3200C15-16GVR 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
Kingston 99U5471-030.A00LF 8GB
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SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
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Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
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内存RAM
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内存RAM
Samsung 1600 CL10 Series 8GB
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G Skill Intl F4-2400C15-8GVB 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
Samsung M471B5273BH1-CF8 4GB
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内存RAM
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Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-4133C19-8GTZKW 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KHX4133C19D4/8GX 8GB
Kingston KHX4133C19D4/8GX 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
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内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM