Corsair VS1GB800D2 1GB vs Kingston 9905743-045.A00G 16GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Kingston 9905743-045.A00G 16GB

Kingston 9905743-045.A00G 16GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 15.4

测试中的平均数值

Kingston 9905743-045.A00G 16GB

需要考虑的原因
Kingston 9905743-045.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 47

左右 -57% 更低的延时
更快的写入速度，GB/s

11.3 1,361.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Kingston 9905743-045.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 30
读取速度，GB/s

4,680.7 15.4
写入速度，GB/s

1,361.1 11.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

460 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMD16GX4M2B3200C14 8GB

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Kingston KF552C40-16 16GB

Samsung M386B4G70DM0-CMA4 32GB

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Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

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Kingston KHX3200C16D4/8GX 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

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Kingston HP24D4U7S8MBP-4 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-4400C19-32GVK 32GB

G Skill Intl F4-4400C19-32GVK 32GB