Corsair VS1GSDS533D2 1GB vs Kingston HP32D4U8D8HC-16XR 16GB

总分

Corsair VS1GSDS533D2 1GB

Corsair VS1GSDS533D2 1GB

总分

Kingston HP32D4U8D8HC-16XR 16GB

Kingston HP32D4U8D8HC-16XR 16GB

差异规格评论

差异

Corsair VS1GSDS533D2 1GB

需要考虑的原因
Corsair VS1GSDS533D2 1GB

报告一个错误

更快的写入速度，GB/s

895.9 16.8

测试中的平均数值

Kingston HP32D4U8D8HC-16XR 16GB

需要考虑的原因
Kingston HP32D4U8D8HC-16XR 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 86

左右 -207% 更低的延时
更快的读取速度，GB/s

17.7 1

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

Corsair VS1GSDS533D2 1GB

Kingston HP32D4U8D8HC-16XR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

86 28
读取速度，GB/s

1,761.9 17.7
写入速度，GB/s

895.9 16.8
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

287 3811

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Crucial Technology CB8GS2400.C8ET 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

SK Hynix HMA41GR7AFR8N-TF 8GB

SK Hynix HMA41GR7AFR8N-TF 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB