Corsair VSA2GSDS667C4 2GB vs Crucial Technology BLS8G4D26BFSC.16FD2 8GB

总分

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

差异规格评论

差异

Corsair VSA2GSDS667C4 2GB

需要考虑的原因
Corsair VSA2GSDS667C4 2GB

报告一个错误

更快的读取速度，GB/s

4 18.4

测试中的平均数值

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 51

左右 -89% 更低的延时
更快的写入速度，GB/s

14.3 1,839.1

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Corsair VSA2GSDS667C4 2GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 27
读取速度，GB/s

4,246.9 18.4
写入速度，GB/s

1,839.1 14.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

721 3388

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Samsung M378A2K43EB1-CWE 16GB

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Corsair CMK32GX5M2B5600C36 16GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

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Kingston 9965516-112.A00LF 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMK16GX4M4B3400C16 4GB

Corsair CMK16GX4M4B3400C16 4GB