Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Crucial Technology CT4G4SFS824A.C8FF 4GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Crucial Technology CT4G4SFS824A.C8FF 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

更快的读取速度，GB/s

16.2 16.1

测试中的平均数值

Crucial Technology CT4G4SFS824A.C8FF 4GB

需要考虑的原因
Crucial Technology CT4G4SFS824A.C8FF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 -36% 更低的延时
更快的写入速度，GB/s

11.1 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 25
读取速度，GB/s

16.2 16.1
写入速度，GB/s

9.7 11.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2636 2164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M2B4000C19 4GB

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Samsung M471B1G73BH0-YK0 8GB

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Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Avant Technology W6451U66J5213ND 4GB

Avant Technology W6451U66J5213ND 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N