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Crucial Technology BLE4G3D1608DE1TX0. 4GB
EVGA 16G-D4-2666-MR 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB vs EVGA 16G-D4-2666-MR 4GB

总分
star star star star star
Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分
star star star star star
EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB

差异 规格 评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB 需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
EVGA 16G-D4-2666-MR 4GB 需要考虑的原因
EVGA 16G-D4-2666-MR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 34
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
EVGA 16G-D4-2666-MR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 23
  • 读取速度，GB/s
    16.2 left arrow 17.3
  • 写入速度，GB/s
    9.7 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2636 left arrow 2942

Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较

Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB

EVGA 16G-D4-2666-MR 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Crucial Technology CT16G4S24AM.M16FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kllisre 8GB
Kllisre 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Apacer Technology GD2.1129WH.001 16GB
Apacer Technology GD2.1129WH.001 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
内存RAM
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F4-4000C18-32GVK 32GB
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston MSI24D4S7S8MB-8 8GB
Kingston MSI24D4S7S8MB-8 8GB
内存RAM
Kingston 99U5403-002.A00LF 2GB
Kingston 99U5403-002.A00LF 2GB
Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMZ16GX3M2A1600C10 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
内存RAM