Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Kingmax Semiconductor GZOH23F-18---------- 16GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 41

左右 17% 更低的延时
更快的读取速度，GB/s

16.2 14.7

测试中的平均数值
更快的写入速度，GB/s

9.7 7.7

测试中的平均数值

Kingmax Semiconductor GZOH23F-18---------- 16GB

需要考虑的原因
Kingmax Semiconductor GZOH23F-18---------- 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 41
读取速度，GB/s

16.2 14.7
写入速度，GB/s

9.7 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2636 2154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

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A-DATA Technology DDR3 1333G 2GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-2666C18-8GFT 8GB

G Skill Intl F4-2666C18-8GFT 8GB

Kingston 99U5474-010.A00LF 2GB

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G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB