Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Patriot Memory (PDP Systems) 2800 C16 Series 8GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 34

左右 -3% 更低的延时
更快的读取速度，GB/s

16.5 16.2

测试中的平均数值
更快的写入速度，GB/s

11.4 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 33
读取速度，GB/s

16.2 16.5
写入速度，GB/s

9.7 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2636 2913

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Samsung M471B5273EB0-CK0 4GB

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Maxsun MSD416G26Q3 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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V-GEN D4H8GL36A8TXV 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CMK32GX4M2B3200C16 16GB

Corsair CMK32GX4M2B3200C16 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Samsung M393A4K40BB1-CRC 32GB

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