Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Smart Modular SF464128CKHI6DFSEG 4GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Smart Modular SF464128CKHI6DFSEG 4GB

Smart Modular SF464128CKHI6DFSEG 4GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 6% 更低的延时
更快的读取速度，GB/s

16.2 15.3

测试中的平均数值

Smart Modular SF464128CKHI6DFSEG 4GB

需要考虑的原因
Smart Modular SF464128CKHI6DFSEG 4GB

报告一个错误

更快的写入速度，GB/s

11.6 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Smart Modular SF464128CKHI6DFSEG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 36
读取速度，GB/s

16.2 15.3
写入速度，GB/s

9.7 11.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2636 2482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Kingston 99U5469-045.A00LF 4GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

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Crucial Technology CT8G4SFD824A.C16FF 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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